MEMS / Sensor
MEMS devices and various integrated circuit sensors are providing an expanding range of capabilities such as motion, pressure, temperature and location detection to a diverse array of Mobile, Consumer, Industrial and Automotive products. These devices often have unique packaging requirements due to their fragile nature. For example, it is common for MEMS devices to require a vacuum or pressurized cavity structure surrounding the sensing components. The integrity, and in many cases the hermeticity, of the bond layers between the cavity structure, the MEMS device and the associated logic devices is critical to the proper function of the integrated device. Currently, the industry employs a variety of techniques such as eutectic-, anodic-, thermo-compression- and glass frit bonding, all of which require long duration processing at high temperatures, leading to constraints on materials selection, lower process throughput and ultimately higher overall cost.
ZiBond and Direct Bond Interconnect (DBI) are low temperature bonding technologies that deliver the high hermeticity bond interfaces required for MEMS production, with higher throughput and lower process cost compared to traditional bonding techniques.
ZiBond® is a low temperature homogenous (e.g. oxide-to-oxide) direct bonding technology that forms strong bonds between wafers or die with same or different coefficients of thermal expansion (CTE). Wafer level bonding is performed at room temperature in less than a minute, followed by a low temperature batch anneal to strengthen the bond and achieve the desired hermeticity required for MEMS and other sensor applications. The bond interface can be formed in a range of dielectric materials, including silicon oxide, silicon nitride and silicon carbide.
DBI® is a low temperature hybrid direct bonding technology that allows wafers or die to be bonded and simultaneously form a metal interconnect without requiring the deposition of solders, fluxes, pastes or adhesives. Similar to ZiBond, after a low temperature anneal, a strong, hermetic bond is achieved which is ideal for MEMS applications.
ZiBond and Direct Bond Interconnect (DBI) are low temperature bonding technologies that deliver higher throughput and lower process cost compared to traditional bonding techniques as well as the hermeticity required for MEMS applications.
Lower temperature and lower stress bond process for superior device reliability and performance
Simplified manufacturing process leading to lower cost
High throughput manufacturing
Hermeticity and superior reliability of the bond interface
The World’s leading MEMS vendors are currently evaluating ZiBond and DBI wafer bonding solutions for high volume production of a range of devices including accelerometers, gyroscopes, pressure and environmental sensors.