Wafer / Die Bonding

OVERVIEW

Wafer bonding and die bonding are key technology enablers in the manufacture of advanced semiconductor devices, particularly for 2.5D and 3D IC assemblies.

  • Wafer-to-wafer bonding is widely used in the manufacture of image sensors to bond pixel array wafers to logic wafers; and in MEMS and RF devices to bond functional wafers to cavity wafers, or high-resistivity substrates for optimal performance, function and cost.
  • Die-to-wafer or die-to-die bonding are often required for heterogeneous stacking, allowing for independent optimization of each device; and for homogeneous stacking, to address wafer yield and variable performance across a wafer, which is particularly important for DRAM applications.

Wafer to Wafer Bonding

Die to Wafer Bonding

Die to Die Bonding

Traditional semiconductor bonding processes require solders, pastes or adhesives as well as the use of high temperature, which can result in layer warpage and delamination, as well as constrained material selection. Collectively, these factors negatively impact yield and manufacturing throughput.
Invensas offers ZiBond and Direct Bond Interconnect (DBI) both of which readily overcome these challenges. These low temperature bonding technologies, deliver homogeneous and heterogenous wafer-to-wafer, die-to-wafer and die-to-die bonding solutions for high resolution image sensors; improved RF performance; thinner, lower cost 3D memory; and reliable hermetic sealing for MEMS applications.

Solving Key Wafer & Die Bonding Challenges

INDUSTRY CHALLENGE
high temperature process

OUR BONDING TECHNOLOGIES
low temperature process

INDUSTRY CHALLENGE
weak / no bond due to different thermal expansion

OUR BONDING TECHNOLOGIES
perfect bond despite different thermal expansion

INDUSTRY CHALLENGE
higher warpage

OUR BONDING TECHNOLOGIES
lower warpage

INDUSTRY CHALLENGE
coarser pitch

OUR BONDING TECHNOLOGIES
very fine pitch interconnects

INDUSTRY CHALLENGE
external pressure and poor properties

OUR BONDING TECHNOLOGIES
no external pressure and excellent properties

INDUSTRY CHALLENGE
higher capital and lower throughput

OUR BONDING TECHNOLOGIES
lower capital and higher throughput

TECHNOLOGIES

ZiBond® is a low temperature homogeneous (oxide-to-oxide) direct bonding technology that forms strong bonds between wafers or die with same or different coefficients of thermal expansion (CTE). Wafer level bonding is performed at room temperature in less than a minute, followed by low temperature batch anneal to strengthen the bond.
DBI® is a low temperature hybrid direct bonding technology that allows wafers or die to be bonded with exceptionally fine pitch 3D electrical interconnect. The metal-to-metal electrical interconnections are formed without using micro bump, under-fills, solders, or alloys. DBI can also minimize the need for high aspect ratio Thru Silicon Vias (TSVs), and enable 3D interconnects with improved performance.
As they are processed at lower temperatures, ZiBond and DBI bonded solutions often have lower stress and enhanced reliability when compared to conventional bonding techniques and also enable lower cost-of-ownership.

DIFFERENTIATORS

Lower unit cost

High throughput manufacturing

Unique functional and performance capabilities

Heterogeneous integration of dissimilar materials

Higher bond energy at lower temperature

Scalability to submicron 3D interconnection pitch

MARKETS

Invensas wafer and die bonding solutions are used in the high volume production of back-side Illuminated (BSI) image sensors and RF front-end devices and are being applied to a wide range of additional applications including MEMS, DRAM, 2.5D and 3D IC assemblies for mobile, consumer and data center markets.

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