Wafer bonding and die bonding are key technology enablers in the manufacture of advanced semiconductor devices, particularly for 2.5D and 3D IC assemblies.

• Wafer-to-wafer bonding is widely used in the manufacture of image sensors to bond pixel array wafers to logic wafers; and in MEMS and RF devices to bond functional wafers to cavity wafers, or high-resistivity substrates for optimal performance, function and cost.
• Die-to-wafer or die-to-die bonding are often required for heterogeneous stacking, allowing for independent optimization of each device; and for homogeneous stacking, to address wafer yield and variable performance across a wafer, which is particularly important for DRAM applications.

Traditional semiconductor bonding processes require solders, pastes or adhesives as well as the use of high temperature, which can result in layer warpage and delamination, as well as constrained material selection. Collectively, these factors negatively impact yield and manufacturing throughput.
Invensas offers ZiBond, Direct Bond Interconnect (DBI), DBI Ultra technologies which readily overcome these challenges. These low temperature bonding technologies, deliver homogeneous and heterogenous wafer-to-wafer, die-to-wafer and die-to-die bonding solutions for high resolution image sensors; improved RF performance; thinner, lower cost 3D memory; and reliable hermetic sealing for MEMS applications.

ZiBond^® is a low temperature homogeneous (oxide-to-oxide) direct bonding technology that forms strong bonds between wafers or die with same or different coefficients of thermal expansion (CTE). Wafer level bonding is performed at room temperature in less than a minute, followed by low temperature batch anneal to strengthen the bond.
DBI^® is a low temperature hybrid direct bonding technology that allows wafers to be bonded with exceptionally fine pitch 3D electrical interconnect. The metal-to-metal electrical interconnections are formed without using micro bump, under-fills, solders, or alloys. DBI can also minimize the need for high aspect ratio Thru Silicon Vias (TSVs), and enable 3D interconnects with improved performance.
DBI^® Ultra is an enabling low-temperature, low profile die to wafer and die to die hybrid bonding technology platform. By eliminating the need for copper pillars and underfill, DBI Ultra can enable a dramatically thinner stack than conventional approaches.
As they are processed at lower temperatures, ZiBond, DBIand DBI Ultra bonded solutions often have lower stress and enhanced reliability when compared to conventional bonding techniques and also enable lower cost-of-ownership.