NAME: ZiBond® technology.
USAGE: Low temperature wafer-to-wafer or die-to-wafer bonding.
HOW: Wafers or die with same or different coefficients of thermal
expansion (CTE) are bonded utilizing a low temperature homogeneous
(oxide-to-oxide) direct bonding technology.
SOLUTIONS: BSI Image Sensor, MEMS, RF, 2.5D/3D IC.
PRODUCTS: Smartphone, Tablet, Laptop, Digital Camera, IoT, TV,
Gaming Console, Industrial, Automotive, Medical.
ZiBond is a low temperature homogenous (e.g. oxide-to-oxide) direct bonding technology that forms strong bonds between wafers or die with same or different coefficients of thermal expansion (CTE).
ZiBond offers multiple benefits over conventional bonding techniques such as adhesives, anodic bonding, eutectic bonding and glass frit. Bonding is performed at room temperature, which enhances overall yield and reliability, by eliminating the negative effects associated with coefficient of expansion (CTE) mismatch, warpage and distortion. Higher throughput and lower cost-of-ownership are realized by using industry-standard wafer alignment and bonding equipment. Without requiring elevated temperature or high pressure during bonding, ZiBond’s high-throughput fabrication process minimizes cost-of-manufacturing during mass-production for high volume market applications.
During ZiBond processing, industry standard dielectric surfaces like silicon oxide and silicon carbide nitride are polished to low surface roughness using conventional chemical-mechanical polishing (CMP) tools and nitrogen-based chemistries are applied through conventional plasma etch processing. Prepared wafer surfaces are then simply aligned and placed together, resulting in the spontaneous formation of chemical bonds between die and/or wafers. A very strong, low distortion chemical bond with a bond strength about half the strength of silicon can be obtained at room temperature, and a reliable hermetic bond stronger than silicon can be obtained after moderate heating to about 150C in batch processes outside of the alignment and placement tool.
ZiBond technology achieves very strong, low distortion bonds at low ambient temperature. It offers multiple performance improvements vs. adhesive, high pressure and elevated temperature techniques used in conventional bonding methods. ZiBond delivers a minimal stress bond, with the high hermeticity required for MEMS and other sensor applications; high electrical isolation required for RF applications; and an ultra-fine sub-micron interconnect that enables minimal package size.
Low temperature process.
Initiate bonding at rooms temperature, eliminate △ CTE process concerns and enhance yield.
Bond between wafers with same or different thermal expansion rate
Chemical bond without
external bond pressure
Minimize warpage and
Low cost with
high bonding throughput